| PART |
Description |
Maker |
| 2SC3117 2SA1249 2SC3117T 2SC3117S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|26
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126
160V/1.5A Switching Applications
|
Sanyo Semicon Device
|
| M391T2953BG0-CD5/CC M378T2953BG0-CD5/CC M378T3354B |
TVS UNIDIRECT 1500W 16V SMC 无缓冲DDR2的内存模
TVS UNIDIRECT 1500W 160V SMC
TVS UNI-DIR 160V 1500W SMC
TVS BIDIRECT 1500W 160V SMC
DDR2 Unbuffered SDRAM MODULE
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 2SB127509 2SB1275 |
Power Transistor (-160V, -1.5A)
|
Rohm
|
| TIP41E TIP41F TIP41D TIP42F TIP42D TIP42E |
POWER TRANSISTORS(6A,120-160V,65W)
POWER TRANSISTORS(6A/120-160V/65W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| TIP33D TIP33E TIP33F TIP34D TIP34E TIP34F |
POWER TRANSISTORS(10A,120-160V,80W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| 2SC2983Y 2SC2983O |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|51AA
|
3M Company
|
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| EN1334 |
Bipolar Transistor, 160V, 0.7A, Low VCE(sat) NPN Single NP
|
ON Semiconductor
|
